Re: [PATCH net-next v9 1/1] net: phy: Cleanup the Edge-Rate feature in Microsemi PHYs.

2016-10-09 Thread Allan W. Nielsen
Hi, On 07/10/16 22:22, Andrew Lunn wrote: > Overall, this is much better. I just have a few nitpicks. It is good to hear that we are getting closer ;-) > dt-bindings/net/mscc-phy-vsc8531.h is removed by this patch. It would > be good to also remove the reference. My bad. > You don't need edge_sl

Re: [PATCH net-next v9 1/1] net: phy: Cleanup the Edge-Rate feature in Microsemi PHYs.

2016-10-09 Thread Andrew Lunn
> Year... I was actually a bit confused about this... But assumed that you had > some conventions about saving "input" configuration. Nope. Humm, actually, i messed up here and missed something. Sorry. You should really do all the DT parsing in the probe function, or a function it calls. We want

Re: [PATCH net-next v9 1/1] net: phy: Cleanup the Edge-Rate feature in Microsemi PHYs.

2016-10-07 Thread Andrew Lunn
On Fri, Oct 07, 2016 at 10:28:24AM +0200, Allan W. Nielsen wrote: > Edge-Rate cleanup include the following: > - Updated device tree bindings documentation for edge-rate > - The edge-rate is now specified as a "slowdown", meaning that it is now > being specified as positive values instead of nega

[PATCH net-next v9 1/1] net: phy: Cleanup the Edge-Rate feature in Microsemi PHYs.

2016-10-07 Thread Allan W. Nielsen
Edge-Rate cleanup include the following: - Updated device tree bindings documentation for edge-rate - The edge-rate is now specified as a "slowdown", meaning that it is now being specified as positive values instead of negative (both documentation and implementation wise). - Only explicitly doc